Fabrication processing of ZnO-Based LEDs

To create efficient ZnO-based LEDs, it is important to develop practical etching process and optimize Ohmic contacts on ZnO. Wet etch rates at 25{degree sign}C for Zn0.95Cd0.05O grown on sapphire substrates by rf plasma-assisted molecular beam epitaxy were in the range 30-90 nm min-1 using HCl/H2O a...

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Veröffentlicht in:	ECS transactions 2006-04, Vol.2 (5), p.153-172
Hauptverfasser:	Chen, Jau-Jiun, Li, Yuanjie, Jang, Soohwan, Anderson, Travis, Fan, Ren, Kim, Hyun-Sik, Gila, Brent, Norton, David, Pearton, Stephen, Rawal, S., Osinsky, A., Dong, J. W., Chu, S. N. G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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