Fabrication processing of ZnO-Based LEDs
To create efficient ZnO-based LEDs, it is important to develop practical etching process and optimize Ohmic contacts on ZnO. Wet etch rates at 25{degree sign}C for Zn0.95Cd0.05O grown on sapphire substrates by rf plasma-assisted molecular beam epitaxy were in the range 30-90 nm min-1 using HCl/H2O a...
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| Veröffentlicht in: | ECS transactions 2006-04, Vol.2 (5), p.153-172 |
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| creator | Chen, Jau-Jiun Li, Yuanjie Jang, Soohwan Anderson, Travis Fan, Ren Kim, Hyun-Sik Gila, Brent Norton, David Pearton, Stephen Rawal, S. Osinsky, A. Dong, J. W. Chu, S. N. G. |
| description | To create efficient ZnO-based LEDs, it is important to develop practical etching process and optimize Ohmic contacts on ZnO. Wet etch rates at 25{degree sign}C for Zn0.95Cd0.05O grown on sapphire substrates by rf plasma-assisted molecular beam epitaxy were in the range 30-90 nm min-1 using HCl/H2O and H3PO4/H2O (2x10- 3-3.5x10-3 M) solutions. A comparison of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type Zn0.95Cd0.05O layers grown on ZnO buffer layers with GaN/sapphire templates shows a minimum contact resistivity of 2.3x10-4 Ω-cm2 obtained at 500{degree sign}C for Ti/Al/Pt/Au and 1.6x10-4 Ω-cm2 was obtained at 450{degree sign} C for Ti/Au. Ti/Au Ohmic contacts on heavily Al-doped (n~1019 cm-3) n-ZnO produce a low specific contact resistivity of 2.4x10-7 Ω- cm2 in the as-deposited condition and extremely low minimum values of 6x10-8 Ω-cm2 after annealing at 300{degree sign}C. |
| doi_str_mv | 10.1149/1.2204888 |
| format | Article |
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Ti/Au Ohmic contacts on heavily Al-doped (n~1019 cm-3) n-ZnO produce a low specific contact resistivity of 2.4x10-7 Ω- cm2 in the as-deposited condition and extremely low minimum values of 6x10-8 Ω-cm2 after annealing at 300{degree sign}C.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.2204888</identifier><language>eng</language><ispartof>ECS transactions, 2006-04, Vol.2 (5), p.153-172</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c748-194274c60eb9dc91a0b8a7b728fdb4d26157e10b719b1085d131c247a9e68ab53</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Chen, Jau-Jiun</creatorcontrib><creatorcontrib>Li, Yuanjie</creatorcontrib><creatorcontrib>Jang, Soohwan</creatorcontrib><creatorcontrib>Anderson, Travis</creatorcontrib><creatorcontrib>Fan, Ren</creatorcontrib><creatorcontrib>Kim, Hyun-Sik</creatorcontrib><creatorcontrib>Gila, Brent</creatorcontrib><creatorcontrib>Norton, David</creatorcontrib><creatorcontrib>Pearton, Stephen</creatorcontrib><creatorcontrib>Rawal, S.</creatorcontrib><creatorcontrib>Osinsky, A.</creatorcontrib><creatorcontrib>Dong, J. 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Ti/Au Ohmic contacts on heavily Al-doped (n~1019 cm-3) n-ZnO produce a low specific contact resistivity of 2.4x10-7 Ω- cm2 in the as-deposited condition and extremely low minimum values of 6x10-8 Ω-cm2 after annealing at 300{degree sign}C.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNotj71OwzAURi1EJUrLwBtkhMHF13Z8r0coLSBF6tKJxfJfUBAklc3C2wMi0_mGo086jF2D2ABoewcbKYUmojO2BKuIG1R4Pu-WjLxgl7W-C2F-dVyym70PZYj-a5jG5lSmmGsdxrdm6pvX8cAffM2p6XaPdc0Wvf-o-Wrmih33u-P2mXeHp5ftfccjauJgtUQdjcjBpmjBi0AeA0rqU9BJGmgxgwgINoCgNoGCKDV6mw350KoVu_2_jWWqteTencrw6cu3A-H-Ch24uVD9ADo5QHg</recordid><startdate>20060428</startdate><enddate>20060428</enddate><creator>Chen, Jau-Jiun</creator><creator>Li, Yuanjie</creator><creator>Jang, Soohwan</creator><creator>Anderson, Travis</creator><creator>Fan, Ren</creator><creator>Kim, Hyun-Sik</creator><creator>Gila, Brent</creator><creator>Norton, David</creator><creator>Pearton, Stephen</creator><creator>Rawal, S.</creator><creator>Osinsky, A.</creator><creator>Dong, J. 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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Fabrication processing of ZnO-Based LEDs |
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