Modeling of Morphological Changes by Surface Diffusion in Silicon Trenches
We present a three - Dimensional model of surface diffusion which describes the time evolution and topography changes of deep trenches under low pressure hydrogen anneal and compare the results with experimental observations. A phase diagram for regular arranged cylindrical trenches was derived by u...
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Veröffentlicht in: | ECS transactions 2006-04, Vol.2 (2), p.363-374 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We present a three - Dimensional model of surface diffusion which describes the time evolution and topography changes of deep trenches under low pressure hydrogen anneal and compare the results with experimental observations. A phase diagram for regular arranged cylindrical trenches was derived by using a genetic optimization algorithm. Seven different structural phases of the final bubble / layer arrangement out of the trench array anneal could be predicted. The impact of perturbations in the regular trench array is discussed too and the change in the phase diagram - shrinkage of the stable region for single top layer formation - is calculated . |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/1.2195673 |