Type conversion in close contact rapid thermal annealing of Si-implanted InP

A number of methods have been studied to prevent the preferential loss of P from the InP surface which occurs at the annealing temperatures necessary to produce good implant activation. These include the use of an encapsulant (typically a dielectric), a controlled atmosphere which presents an overpr...

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Veröffentlicht in:	J. Electrochem. Soc.; (United States) 1987-02, Vol.134 (2), p.498-499
Hauptverfasser:	FARLEY, C. W, STREETMAN, B. G
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 > Materials-- Properties ACTIVATION ENERGY ANNEALING Applied sciences ATMOSPHERES CONTROLLED ATMOSPHERES DEPOSITION DIELECTRIC MATERIALS ELECTRICAL PROPERTIES Electronics ELEMENTS ENERGY Exact sciences and technology FABRICATION HALL EFFECT HEAT TREATMENTS HIGH TEMPERATURE INDIUM COMPOUNDS INDIUM PHOSPHIDES ION IMPLANTATION IRON LOSSES MATERIALS MATERIALS SCIENCE METALS Microelectronic fabrication (materials and surfaces technology) N-TYPE CONDUCTORS P-TYPE CONDUCTORS PHOSPHIDES PHOSPHORUS COMPOUNDS PHYSICAL PROPERTIES PNICTIDES PRESSURE EFFECTS Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTOR MATERIALS SEMIMETALS SILICON SURFACES TRANSITION ELEMENTS 360601 > Other Materials-- Preparation & Manufacture
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