The effect of metal masks on the plasma etch rate of silicon

The effect of metal masks on the plasma etch rate of silicon

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Veröffentlicht in:Journal of the Electrochemical Society 1989-06, Vol.136 (6), p.1799-1804
Hauptverfasser: FEDYNYSHYN, T. H, GRYNKEWICH, G. W, CHEN, B. A, MA, T. P
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 1804
container_issue 6
container_start_page 1799
container_title Journal of the Electrochemical Society
container_volume 136
creator FEDYNYSHYN, T. H
GRYNKEWICH, G. W
CHEN, B. A
MA, T. P
description
doi_str_mv 10.1149/1.2097015
format Article
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ispartof Journal of the Electrochemical Society, 1989-06, Vol.136 (6), p.1799-1804
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1945-7111
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recordid cdi_crossref_primary_10_1149_1_2097015
source IOP Publishing Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title The effect of metal masks on the plasma etch rate of silicon
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