Improved porous mixture of molybdenum nitride and tantalum oxide as a charge storage material

High surface area {gamma}-molybdenum nitride has shown promise as a charge storage material. The addition of amorphous tantalum oxide to the molybdenum nitride system not only improves the film cohesion tremendously, but also widens the voltage stability window from 0.8 to 1.1 V. This occurs without...

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Veröffentlicht in:	Journal of the Electrochemical Society 1998-04, Vol.145 (4), p.L61-L63
Hauptverfasser:	DENG, C. Z, PYNENBURG, R. A. J, TSAI, K. C
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CAPACITANCE CAPACITIVE ENERGY STORAGE EQUIPMENT Capacitors. Resistors. Filters Electrical engineering. Electrical power engineering ENERGY STORAGE Exact sciences and technology MATERIALS SCIENCE MOLYBDENUM NITRIDES PHYSICAL PROPERTIES POROSITY SURFACE AREA TANTALUM OXIDES Various equipment and components
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