Improved porous mixture of molybdenum nitride and tantalum oxide as a charge storage material
High surface area {gamma}-molybdenum nitride has shown promise as a charge storage material. The addition of amorphous tantalum oxide to the molybdenum nitride system not only improves the film cohesion tremendously, but also widens the voltage stability window from 0.8 to 1.1 V. This occurs without...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1998-04, Vol.145 (4), p.L61-L63 |
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| container_end_page | L63 |
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| container_issue | 4 |
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| container_title | Journal of the Electrochemical Society |
| container_volume | 145 |
| creator | DENG, C. Z PYNENBURG, R. A. J TSAI, K. C |
| description | High surface area {gamma}-molybdenum nitride has shown promise as a charge storage material. The addition of amorphous tantalum oxide to the molybdenum nitride system not only improves the film cohesion tremendously, but also widens the voltage stability window from 0.8 to 1.1 V. This occurs without adversely effecting the capacitance. Ultracapacitors, also called supercapacitors or electrochemical capacitors, are high power storage devices which have found application in products as diverse as cardiac pacemakers, cellular phones, electric vehicles, and air bags. |
| doi_str_mv | 10.1149/1.1838416 |
| format | Article |
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Electrical power engineering</subject><subject>ENERGY STORAGE</subject><subject>Exact sciences and technology</subject><subject>MATERIALS SCIENCE</subject><subject>MOLYBDENUM NITRIDES</subject><subject>PHYSICAL PROPERTIES</subject><subject>POROSITY</subject><subject>SURFACE AREA</subject><subject>TANTALUM OXIDES</subject><subject>Various equipment and components</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNo9kMtOwzAQRS0EEqWw4A-MxIZFiid2EmeJKh6VKrGBJYomflCjJI5sF7V_T6AVq6s5OnMXl5BrYAsAUd_DAiSXAsoTMoNaFFkFAKdkxhjwTJQFnJOLGL-mE6SoZuRj1Y_BfxtNRx_8NtLe7dI2GOot7X23b7UZtj0dXApOG4qDpgmHhN0E_e4PRYpUbTB8GhqTDzhlj8kEh90lObPYRXN1zDl5f3p8W75k69fn1fJhnSkuZMpQ16aoodSmtVZrZlALpRnWwApZ8Rzzsp6ozbmWistCCSsLpkGXrc1Vy_ic3Bx6fUyuicolozbKD4NRqSlzkU8tc3J3cFTwMQZjmzG4HsO-Adb8btdAc9xucm8P7ohRYWcDDsrF_4c8Z6LgFf8Bz9tvRg</recordid><startdate>19980401</startdate><enddate>19980401</enddate><creator>DENG, C. 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Electrical power engineering</topic><topic>ENERGY STORAGE</topic><topic>Exact sciences and technology</topic><topic>MATERIALS SCIENCE</topic><topic>MOLYBDENUM NITRIDES</topic><topic>PHYSICAL PROPERTIES</topic><topic>POROSITY</topic><topic>SURFACE AREA</topic><topic>TANTALUM OXIDES</topic><topic>Various equipment and components</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DENG, C. Z</creatorcontrib><creatorcontrib>PYNENBURG, R. A. J</creatorcontrib><creatorcontrib>TSAI, K. C</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DENG, C. Z</au><au>PYNENBURG, R. A. J</au><au>TSAI, K. C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved porous mixture of molybdenum nitride and tantalum oxide as a charge storage material</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1998-04-01</date><risdate>1998</risdate><volume>145</volume><issue>4</issue><spage>L61</spage><epage>L63</epage><pages>L61-L63</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><abstract>High surface area {gamma}-molybdenum nitride has shown promise as a charge storage material. The addition of amorphous tantalum oxide to the molybdenum nitride system not only improves the film cohesion tremendously, but also widens the voltage stability window from 0.8 to 1.1 V. This occurs without adversely effecting the capacitance. 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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1998-04, Vol.145 (4), p.L61-L63 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_1838416 |
| source | Institute of Physics Journals |
| subjects | Applied sciences CAPACITANCE CAPACITIVE ENERGY STORAGE EQUIPMENT Capacitors. Resistors. Filters Electrical engineering. Electrical power engineering ENERGY STORAGE Exact sciences and technology MATERIALS SCIENCE MOLYBDENUM NITRIDES PHYSICAL PROPERTIES POROSITY SURFACE AREA TANTALUM OXIDES Various equipment and components |
| title | Improved porous mixture of molybdenum nitride and tantalum oxide as a charge storage material |
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