Atmospheric pressure chemical vapor deposition of titanium nitride from tetrakis (diethylamido) titanium and ammonia
Titanium nitride (TiN) films were made from tetrakis (diethylamido) titanium (TDEAT) and ammonia by atmospheric pressure chemical vapor deposition (APCVD). Growth rates, stoichiometries, and resistivities were studied as a function of temperature and ammonia: TDEAT ratios. Films were characterized b...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1996-02, Vol.143 (2), p.736-744 |
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| container_end_page | 744 |
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| container_title | Journal of the Electrochemical Society |
| container_volume | 143 |
| creator | MUSHER, J. N GORDON, R. G |
| description | Titanium nitride (TiN) films were made from tetrakis (diethylamido) titanium (TDEAT) and ammonia by atmospheric pressure chemical vapor deposition (APCVD). Growth rates, stoichiometries, and resistivities were studied as a function of temperature and ammonia: TDEAT ratios. Films were characterized by four-point probe, rutherford backscattering, forward (elastic) recoil, and x-ray photoelectron spectroscopies. TDEAT was found to have a higher deposition efficiency (> 1/3), and slower reaction kinetics than the related Ti(NMe{sub 2}){sub 4} (TDMAT) compound. Higher temperatures and relative NH{sub 3} concentrations were necessary to achieve similar growth rates. Though growth was slower than when using TDMAT, films from TDEAT had higher step coverage, lower resistivities (< 1,000 {micro}{Omega}-cm) and were more stable with time. These films are promising candidates for diffusion barriers in 0.25 {micro}m ULSI device technologies. |
| doi_str_mv | 10.1149/1.1836510 |
| format | Article |
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N ; GORDON, R. G</creator><creatorcontrib>MUSHER, J. N ; GORDON, R. G</creatorcontrib><description>Titanium nitride (TiN) films were made from tetrakis (diethylamido) titanium (TDEAT) and ammonia by atmospheric pressure chemical vapor deposition (APCVD). Growth rates, stoichiometries, and resistivities were studied as a function of temperature and ammonia: TDEAT ratios. Films were characterized by four-point probe, rutherford backscattering, forward (elastic) recoil, and x-ray photoelectron spectroscopies. TDEAT was found to have a higher deposition efficiency (> 1/3), and slower reaction kinetics than the related Ti(NMe{sub 2}){sub 4} (TDMAT) compound. Higher temperatures and relative NH{sub 3} concentrations were necessary to achieve similar growth rates. Though growth was slower than when using TDMAT, films from TDEAT had higher step coverage, lower resistivities (< 1,000 {micro}{Omega}-cm) and were more stable with time. These films are promising candidates for diffusion barriers in 0.25 {micro}m ULSI device technologies.</description><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.1836510</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>AMMONIA ; CHEMICAL VAPOR DEPOSITION ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; CRYSTAL GROWTH ; ELECTRIC CONDUCTIVITY ; ENGINEERING NOT INCLUDED IN OTHER CATEGORIES ; Exact sciences and technology ; FABRICATION ; INTEGRATED CIRCUITS ; MATERIALS SCIENCE ; Methods of deposition of films and coatings; film growth and epitaxy ; ORGANOMETALLIC COMPOUNDS ; Physics ; TITANIUM COMPOUNDS ; TITANIUM NITRIDES</subject><ispartof>Journal of the Electrochemical Society, 1996-02, Vol.143 (2), p.736-744</ispartof><rights>1996 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-59f504b7ee1781ecd0fcdcf8a120b2110db90a687cae73eec2c8a43e75cbe6b83</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2994462$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/212172$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>MUSHER, J. N</creatorcontrib><creatorcontrib>GORDON, R. G</creatorcontrib><title>Atmospheric pressure chemical vapor deposition of titanium nitride from tetrakis (diethylamido) titanium and ammonia</title><title>Journal of the Electrochemical Society</title><description>Titanium nitride (TiN) films were made from tetrakis (diethylamido) titanium (TDEAT) and ammonia by atmospheric pressure chemical vapor deposition (APCVD). Growth rates, stoichiometries, and resistivities were studied as a function of temperature and ammonia: TDEAT ratios. Films were characterized by four-point probe, rutherford backscattering, forward (elastic) recoil, and x-ray photoelectron spectroscopies. TDEAT was found to have a higher deposition efficiency (> 1/3), and slower reaction kinetics than the related Ti(NMe{sub 2}){sub 4} (TDMAT) compound. Higher temperatures and relative NH{sub 3} concentrations were necessary to achieve similar growth rates. Though growth was slower than when using TDMAT, films from TDEAT had higher step coverage, lower resistivities (< 1,000 {micro}{Omega}-cm) and were more stable with time. These films are promising candidates for diffusion barriers in 0.25 {micro}m ULSI device technologies.</description><subject>AMMONIA</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ENGINEERING NOT INCLUDED IN OTHER CATEGORIES</subject><subject>Exact sciences and technology</subject><subject>FABRICATION</subject><subject>INTEGRATED CIRCUITS</subject><subject>MATERIALS SCIENCE</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>ORGANOMETALLIC COMPOUNDS</subject><subject>Physics</subject><subject>TITANIUM COMPOUNDS</subject><subject>TITANIUM NITRIDES</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLAzEUhYMoWKsL_0EEF3YxNTeTeS1L8QUFN7oeMjc3NNqZDEkq9N87UtHV5XC_cxYfY9cglgCquYcl1HlZgDhhM2hUkVUAcMpmQkCeqelxzi5i_Jgi1KqasbRKvY_jloJDPgaKcR-I45Z6h3rHv_ToAzc0-uiS8wP3lieX9OD2PR9cCs4Qt8H3PFEK-tNFfmccpe1hp3tn_OKf1oPhuu_94PQlO7N6F-nq987Z--PD2_o527w-vaxXmwxzVaesaGwhVFcRQVUDoREWDdpagxSdBBCma4Qu6wo1VTkRSqy1yqkqsKOyq_M5uznu-phcG9Elwi36YSBMrQQJlZyYxZHB4GMMZNsxuF6HQwui_VHaQvurdGJvj-yo42THBj2gi38F2TRKlTL_Bk-aeGY</recordid><startdate>19960201</startdate><enddate>19960201</enddate><creator>MUSHER, J. N</creator><creator>GORDON, R. G</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19960201</creationdate><title>Atmospheric pressure chemical vapor deposition of titanium nitride from tetrakis (diethylamido) titanium and ammonia</title><author>MUSHER, J. N ; GORDON, R. G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-59f504b7ee1781ecd0fcdcf8a120b2110db90a687cae73eec2c8a43e75cbe6b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>AMMONIA</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ENGINEERING NOT INCLUDED IN OTHER CATEGORIES</topic><topic>Exact sciences and technology</topic><topic>FABRICATION</topic><topic>INTEGRATED CIRCUITS</topic><topic>MATERIALS SCIENCE</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>ORGANOMETALLIC COMPOUNDS</topic><topic>Physics</topic><topic>TITANIUM COMPOUNDS</topic><topic>TITANIUM NITRIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MUSHER, J. N</creatorcontrib><creatorcontrib>GORDON, R. G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MUSHER, J. N</au><au>GORDON, R. G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atmospheric pressure chemical vapor deposition of titanium nitride from tetrakis (diethylamido) titanium and ammonia</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1996-02-01</date><risdate>1996</risdate><volume>143</volume><issue>2</issue><spage>736</spage><epage>744</epage><pages>736-744</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><abstract>Titanium nitride (TiN) films were made from tetrakis (diethylamido) titanium (TDEAT) and ammonia by atmospheric pressure chemical vapor deposition (APCVD). Growth rates, stoichiometries, and resistivities were studied as a function of temperature and ammonia: TDEAT ratios. Films were characterized by four-point probe, rutherford backscattering, forward (elastic) recoil, and x-ray photoelectron spectroscopies. TDEAT was found to have a higher deposition efficiency (> 1/3), and slower reaction kinetics than the related Ti(NMe{sub 2}){sub 4} (TDMAT) compound. Higher temperatures and relative NH{sub 3} concentrations were necessary to achieve similar growth rates. Though growth was slower than when using TDMAT, films from TDEAT had higher step coverage, lower resistivities (< 1,000 {micro}{Omega}-cm) and were more stable with time. These films are promising candidates for diffusion barriers in 0.25 {micro}m ULSI device technologies.</abstract><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1836510</doi><tpages>9</tpages></addata></record> |
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| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1996-02, Vol.143 (2), p.736-744 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_1836510 |
| source | IOP Publishing Journals |
| subjects | AMMONIA CHEMICAL VAPOR DEPOSITION Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology CRYSTAL GROWTH ELECTRIC CONDUCTIVITY ENGINEERING NOT INCLUDED IN OTHER CATEGORIES Exact sciences and technology FABRICATION INTEGRATED CIRCUITS MATERIALS SCIENCE Methods of deposition of films and coatings film growth and epitaxy ORGANOMETALLIC COMPOUNDS Physics TITANIUM COMPOUNDS TITANIUM NITRIDES |
| title | Atmospheric pressure chemical vapor deposition of titanium nitride from tetrakis (diethylamido) titanium and ammonia |
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