Development of a Wide Range pH Sensor based on Electrolyte-Insulator-Semiconductor Structure with Corrosion-Resistant Al[sub 2]O[sub 3]-Ta[sub 2]O[sub 5] and Al[sub 2]O[sub 3]-ZrO[sub 2] Double-Oxide Thin Films

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of the Electrochemical Society 2004-03, Vol.151 (3), p.H53
Hauptverfasser:	Yoshida, Shoji, Hara, Nobuyoshi, Sugimoto, Katsuhisa
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	3
container_start_page	H53
container_title	Journal of the Electrochemical Society
container_volume	151
creator	Yoshida, Shoji Hara, Nobuyoshi Sugimoto, Katsuhisa
description
doi_str_mv	10.1149/1.1643074
format	Article
fullrecord	<record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_1643074</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_1643074</sourcerecordid><originalsourceid>FETCH-LOGICAL-c194t-bc55b93161ac814d5dcd109a632e654befd325525b416b564140f0ef363efba3</originalsourceid><addsrcrecordid>eNptUctKw0AUzULB-lj4B7N1MTU3M5M2y9KHLRQCbUBQSphJbmwkmSkzidqdW__PL_BLTLUbwdV5cLgPjuddg98H4NEt9CHkzB_wE6_n-8AoDwWceefOPXcShnzQ8z4n-IKV2dWoG2IKIsl9mSNZSf2EZDcna9TOWKKkw5wYTaYVZo011b5ButCurWRjLF1jXWZG523WKbJubEdai-S1bLZkbKw1rjSartCVrpHdplH16FpFgk38g2xDE_nHERsidf5P7sHGR4tMTKsqpPHb4eJkW-qv949ZWdXu0jstZOXw6ogXXjKbJuM5XcZ3i_FoSTOIeENVJoSKGIQgsyHwXORZDn4kQxZgKLjCImeBEIFQHEIlQg7cL3wsWMiwUJJdeDe_Y7PuP2exSHe2rKXdp-CnhwZSSI8NsG93k33T</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Development of a Wide Range pH Sensor based on Electrolyte-Insulator-Semiconductor Structure with Corrosion-Resistant Al[sub 2]O[sub 3]-Ta[sub 2]O[sub 5] and Al[sub 2]O[sub 3]-ZrO[sub 2] Double-Oxide Thin Films</title><source>Institute of Physics Journals</source><creator>Yoshida, Shoji ; Hara, Nobuyoshi ; Sugimoto, Katsuhisa</creator><creatorcontrib>Yoshida, Shoji ; Hara, Nobuyoshi ; Sugimoto, Katsuhisa</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>DOI: 10.1149/1.1643074</identifier><language>eng</language><ispartof>Journal of the Electrochemical Society, 2004-03, Vol.151 (3), p.H53</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c194t-bc55b93161ac814d5dcd109a632e654befd325525b416b564140f0ef363efba3</citedby><cites>FETCH-LOGICAL-c194t-bc55b93161ac814d5dcd109a632e654befd325525b416b564140f0ef363efba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yoshida, Shoji</creatorcontrib><creatorcontrib>Hara, Nobuyoshi</creatorcontrib><creatorcontrib>Sugimoto, Katsuhisa</creatorcontrib><title>Development of a Wide Range pH Sensor based on Electrolyte-Insulator-Semiconductor Structure with Corrosion-Resistant Al[sub 2]O[sub 3]-Ta[sub 2]O[sub 5] and Al[sub 2]O[sub 3]-ZrO[sub 2] Double-Oxide Thin Films</title><title>Journal of the Electrochemical Society</title><issn>0013-4651</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNptUctKw0AUzULB-lj4B7N1MTU3M5M2y9KHLRQCbUBQSphJbmwkmSkzidqdW__PL_BLTLUbwdV5cLgPjuddg98H4NEt9CHkzB_wE6_n-8AoDwWceefOPXcShnzQ8z4n-IKV2dWoG2IKIsl9mSNZSf2EZDcna9TOWKKkw5wYTaYVZo011b5ButCurWRjLF1jXWZG523WKbJubEdai-S1bLZkbKw1rjSartCVrpHdplH16FpFgk38g2xDE_nHERsidf5P7sHGR4tMTKsqpPHb4eJkW-qv949ZWdXu0jstZOXw6ogXXjKbJuM5XcZ3i_FoSTOIeENVJoSKGIQgsyHwXORZDn4kQxZgKLjCImeBEIFQHEIlQg7cL3wsWMiwUJJdeDe_Y7PuP2exSHe2rKXdp-CnhwZSSI8NsG93k33T</recordid><startdate>20040301</startdate><enddate>20040301</enddate><creator>Yoshida, Shoji</creator><creator>Hara, Nobuyoshi</creator><creator>Sugimoto, Katsuhisa</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040301</creationdate><title>Development of a Wide Range pH Sensor based on Electrolyte-Insulator-Semiconductor Structure with Corrosion-Resistant Al[sub 2]O[sub 3]-Ta[sub 2]O[sub 5] and Al[sub 2]O[sub 3]-ZrO[sub 2] Double-Oxide Thin Films</title><author>Yoshida, Shoji ; Hara, Nobuyoshi ; Sugimoto, Katsuhisa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c194t-bc55b93161ac814d5dcd109a632e654befd325525b416b564140f0ef363efba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoshida, Shoji</creatorcontrib><creatorcontrib>Hara, Nobuyoshi</creatorcontrib><creatorcontrib>Sugimoto, Katsuhisa</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoshida, Shoji</au><au>Hara, Nobuyoshi</au><au>Sugimoto, Katsuhisa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development of a Wide Range pH Sensor based on Electrolyte-Insulator-Semiconductor Structure with Corrosion-Resistant Al[sub 2]O[sub 3]-Ta[sub 2]O[sub 5] and Al[sub 2]O[sub 3]-ZrO[sub 2] Double-Oxide Thin Films</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2004-03-01</date><risdate>2004</risdate><volume>151</volume><issue>3</issue><spage>H53</spage><pages>H53-</pages><issn>0013-4651</issn><doi>10.1149/1.1643074</doi><oa>free_for_read</oa></addata></record>
fulltext	fulltext
identifier	ISSN: 0013-4651
ispartof	Journal of the Electrochemical Society, 2004-03, Vol.151 (3), p.H53
issn	0013-4651
language	eng
recordid	cdi_crossref_primary_10_1149_1_1643074
source	Institute of Physics Journals
title	Development of a Wide Range pH Sensor based on Electrolyte-Insulator-Semiconductor Structure with Corrosion-Resistant Al[sub 2]O[sub 3]-Ta[sub 2]O[sub 5] and Al[sub 2]O[sub 3]-ZrO[sub 2] Double-Oxide Thin Films
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T03%3A57%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Development%20of%20a%20Wide%20Range%20pH%20Sensor%20based%20on%20Electrolyte-Insulator-Semiconductor%20Structure%20with%20Corrosion-Resistant%20Al%5Bsub%202%5DO%5Bsub%203%5D-Ta%5Bsub%202%5DO%5Bsub%205%5D%20and%20Al%5Bsub%202%5DO%5Bsub%203%5D-ZrO%5Bsub%202%5D%20Double-Oxide%20Thin%E2%80%89Films&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Yoshida,%20Shoji&rft.date=2004-03-01&rft.volume=151&rft.issue=3&rft.spage=H53&rft.pages=H53-&rft.issn=0013-4651&rft_id=info:doi/10.1149/1.1643074&rft_dat=%3Ccrossref%3E10_1149_1_1643074%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true