Effect of Gate Electrode Structure on Gate Oxide Integrity
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| Veröffentlicht in: | Electrochemical and solid-state letters 2003, Vol.6 (1), p.G1 |
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| Sprache: | eng |
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| container_issue | 1 |
| container_start_page | G1 |
| container_title | Electrochemical and solid-state letters |
| container_volume | 6 |
| creator | Ryu, Hyuk-Hyun Cha, Han-Seob Lee, Jeong-Gun |
| description | |
| doi_str_mv | 10.1149/1.1523738 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1099-0062 |
| ispartof | Electrochemical and solid-state letters, 2003, Vol.6 (1), p.G1 |
| issn | 1099-0062 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_1523738 |
| source | IOP Publishing Journals |
| title | Effect of Gate Electrode Structure on Gate Oxide Integrity |
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