Degradation of reactively sputtered Ti-Si-N films used as a barrier layer in titanium silicide/polycrystalline Si gate electrodes
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| Veröffentlicht in: | Journal of the Electrochemical Society 1999-04, Vol.146 (4), p.1579-1582 |
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| container_end_page | 1582 |
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| container_issue | 4 |
| container_start_page | 1579 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 146 |
| creator | PARK, J.-S DONG KYUN SOHN BYUNG HAK LEE BAE, J.-U JEONG SOO BYUN JI WON PARK |
| description | |
| doi_str_mv | 10.1149/1.1391808 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1999-04, Vol.146 (4), p.1579-1582 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_1391808 |
| source | IOP Publishing Journals |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Deposition by sputtering Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Degradation of reactively sputtered Ti-Si-N films used as a barrier layer in titanium silicide/polycrystalline Si gate electrodes |
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