Point Defect Model Description of the Formation of Anodic Gold Oxide in H 2 SO 4 Solution

An impedance-based Point Defect Model (PDM) was developed for the potentiostatic, anodic formation of gold oxide at potentials of 1.40–1.70 V vs SHE in H 2 SO 4 (0.1 M and 0.5 M). Film thickness and refractive indices were determined at each oxide formation potential using spectroscopic ellipsometry...

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Veröffentlicht in:Journal of the Electrochemical Society 2021-04, Vol.168 (4), p.41506
Hauptverfasser: Ghelichkhah, Zahed, Ferguson, Gregory S., Macdonald, Digby D., Sharifi-Asl, Samin
Format: Artikel
Sprache:eng
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Zusammenfassung:An impedance-based Point Defect Model (PDM) was developed for the potentiostatic, anodic formation of gold oxide at potentials of 1.40–1.70 V vs SHE in H 2 SO 4 (0.1 M and 0.5 M). Film thickness and refractive indices were determined at each oxide formation potential using spectroscopic ellipsometry. The thickness of the oxide increases linearly with increasing potential. Mott-Schottky analysis shows that the oxide exhibits both n-type and p-type character and the dominant defect density is calculated to be in the order of 10 21 −10 22 (1 cm −3 ). The PDM was optimized upon experimental EIS data to extract values for model parameters and accounts well for the experimental observations in both the steady-state time and frequency domains.
ISSN:0013-4651
1945-7111
DOI:10.1149/1945-7111/abf409