Simulation and Comparison of Current-Voltage Characteristics in Double Gate Nanowire FET Using ZnO and SiO 2 as Gate Oxide Materials

The aim of the project is to simulate and compare current-voltage characteristics in double gate nanowire field effect transistors made of ZnO and SiO 2 gate oxides with thicknesses ranging from 1 to 30 nm. Materials and methods: The drain characteristics of double gate nanowire FET for the two gate oxides were considered for analysis. Altogether 147 drain current samples were considered for each group. Results: The two groups are subjected to an independent sample test using SPSS software, which calculates the significant mean value. The SPSS tool's chart builder is used to create a statistical graph. The mean for those in the highest quartile of drain current of ZnO based DG NW FET (drain current=0.461 mA, 95% CI:0.232-0.458 mA, p