TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density

TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density

We have evaluated, through TCAD simulation, 3-dimensional oxide-semiconductor NAND (3D OS NAND), a novel vertically-stacked 2T-1C memory using cylindrical c-axis aligned crystalline In-Ga-Zn-Oxide (CAAC-IGZO) channels. Taking advantage of low off-leakage of CAAC-IGZO field-effect transistors (CAAC-I...

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Veröffentlicht in:ECS transactions 2020-09, Vol.98 (7), p.55-67
Hauptverfasser: Kunitake, Hitoshi, Kimura, Hajime, Tsuda, Kazuki, Godo, Hiromichi, Murakawa, Tsutomu, Sawai, Hiromi, Baba, Haruyuki, Sasagawa, Shinya, Ikeda, Takayuki, Yamazaki, Shunpei
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container_issue 7
container_start_page 55
container_title ECS transactions
container_volume 98
creator Kunitake, Hitoshi
Kimura, Hajime
Tsuda, Kazuki
Godo, Hiromichi
Murakawa, Tsutomu
Sawai, Hiromi
Baba, Haruyuki
Sasagawa, Shinya
Ikeda, Takayuki
Yamazaki, Shunpei
description We have evaluated, through TCAD simulation, 3-dimensional oxide-semiconductor NAND (3D OS NAND), a novel vertically-stacked 2T-1C memory using cylindrical c-axis aligned crystalline In-Ga-Zn-Oxide (CAAC-IGZO) channels. Taking advantage of low off-leakage of CAAC-IGZO field-effect transistors (CAAC-IGZO FETs), the memory does not use a metal-oxide-nitride-oxide-silicon (MONOS) structure for writing. This memory architecture is potentially capable of achieving a memory density and a 10-year retention similar to NAND flash, operating with a supply voltage of 4 V or below, while overcoming the endurance challenge of NAND flash.
doi_str_mv 10.1149/09807.0055ecst
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title TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density
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