Radiation-Induced DC Parametric Degradation of Enhancement Mode GaN-on-(111)Silicon High-Electron-Mobility Transistors

AlGaN/GaN high-electron-mobility transistors (HEMTs) for applications in radiation environments has required the exact determination of their radiation hardness. Although bulk GaN is the preferred substrate for the epitaxial growth of GaN and AlGaN, (111) silicon is a possible substrate for HEMT dev...

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Veröffentlicht in:	ECS transactions 2019-07, Vol.92 (7), p.57-68
Hauptverfasser:	Lu, Yizhou, Christou, Aristos
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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