Measurement of Low Concentration Nitrogen in Czochralski Silicon by Infrared Absorption Spectroscopy

Nitrogen in Czochralski silicon mainly forms pair with oxygen at low concentration, in contrast to forming NN pair at high concentration. To measure nitrogen concentration in NO pair form, local vibration modes of NO family such as NO, NOO and NOO2 were examined. By removing LVMs by NN family and ox...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Inoue, Naohisa, Okuda, Shuichi, Kawamata, Shuichi
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!