AlGaN/GaN High Electron Mobility Transistors with a p-Type GaN Cap Layer

In this work, AlGaN/GaN HEMTs with different types of p-GaN cap layers were fabricated and investigated. The p-GaN cap layer used in this study was for passivation study instead of forming enhancement-mode operation. The differences in p-GaN cap layers were Mg-doping concentration (1×1019 and 3×1019...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Tsai, Hsin-Chang, Fan Chiang, Shao-Chi, Zhong, Yi Nan, Hsin, Yue-Ming
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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