(Invited) Laser Annealing in CMOS Manufacturing

(Invited) Laser Annealing in CMOS Manufacturing

Laser Annealing was introduced into mainstream CMOS manufacturing nearly a decade ago and since then has been evolving capturing new applications and expanding into new process regimes. This invited paper provides an overview of the adoption and the applications of millisecond-scale laser annealing...

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Hauptverfasser: Gluschenkov, Oleg, Jagannathan, Hemanth
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description Laser Annealing was introduced into mainstream CMOS manufacturing nearly a decade ago and since then has been evolving capturing new applications and expanding into new process regimes. This invited paper provides an overview of the adoption and the applications of millisecond-scale laser annealing in CMOS technologies. Building on the presented historical perspective, this paper then discusses and compares applications of nanosecond-scale laser annealing in future CMOS technologies. Mitigation of thermal pattern effects are also discussed in the context of different device architectures built on both bulk and SOI substrates.
doi_str_mv 10.1149/08506.0011ecst
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fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_08506_0011ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10.1149/08506.0011ecst</sourcerecordid><originalsourceid>FETCH-LOGICAL-c274t-a643dcdf4bfc92a2636e33c1f42921336341abcd3448e1bc42d2f1fc1e5c5ccc3</originalsourceid><addsrcrecordid>eNp1j8FLwzAUh4MoOKdXzz2q0C4vSdP2OIrTQccO6jmkL4l0zHQkreB_b3Xz6Ok9Hu_78fsIuQWaAYhqQcucyoxSAItxOCMzqHiZyoIX56c9LyW7JFcx7iiVE1PMyOJu7T-7wZr7pNHRhmTpvdX7zr8nnU_qzfYl2Wg_Oo3DGKbrNblweh_tzWnOydvq8bV-Tpvt07peNimyQgyploIbNE60DiummeTSco7gBKsYcC65AN2i4UKUFloUzDAHDsHmmCMin5PsmIuhjzFYpw6h-9DhSwFVP7rqV1f96U7AwxHo-oPa9WPwU73_nr8BwFFVIw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>(Invited) Laser Annealing in CMOS Manufacturing</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Gluschenkov, Oleg ; Jagannathan, Hemanth</creator><creatorcontrib>Gluschenkov, Oleg ; Jagannathan, Hemanth</creatorcontrib><description>Laser Annealing was introduced into mainstream CMOS manufacturing nearly a decade ago and since then has been evolving capturing new applications and expanding into new process regimes. This invited paper provides an overview of the adoption and the applications of millisecond-scale laser annealing in CMOS technologies. Building on the presented historical perspective, this paper then discusses and compares applications of nanosecond-scale laser annealing in future CMOS technologies. Mitigation of thermal pattern effects are also discussed in the context of different device architectures built on both bulk and SOI substrates.</description><identifier>ISSN: 1938-5862</identifier><identifier>ISSN: 1938-6737</identifier><identifier>EISSN: 1938-6737</identifier><identifier>EISSN: 1938-5862</identifier><identifier>DOI: 10.1149/08506.0011ecst</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2018, Vol.85 (6), p.11-23</ispartof><rights>2018 ECS - The Electrochemical Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c274t-a643dcdf4bfc92a2636e33c1f42921336341abcd3448e1bc42d2f1fc1e5c5ccc3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/08506.0011ecst/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>315,781,785,27929,27930,53851,53898</link.rule.ids></links><search><creatorcontrib>Gluschenkov, Oleg</creatorcontrib><creatorcontrib>Jagannathan, Hemanth</creatorcontrib><title>(Invited) Laser Annealing in CMOS Manufacturing</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>Laser Annealing was introduced into mainstream CMOS manufacturing nearly a decade ago and since then has been evolving capturing new applications and expanding into new process regimes. This invited paper provides an overview of the adoption and the applications of millisecond-scale laser annealing in CMOS technologies. Building on the presented historical perspective, this paper then discusses and compares applications of nanosecond-scale laser annealing in future CMOS technologies. Mitigation of thermal pattern effects are also discussed in the context of different device architectures built on both bulk and SOI substrates.</description><issn>1938-5862</issn><issn>1938-6737</issn><issn>1938-6737</issn><issn>1938-5862</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2018</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp1j8FLwzAUh4MoOKdXzz2q0C4vSdP2OIrTQccO6jmkL4l0zHQkreB_b3Xz6Ok9Hu_78fsIuQWaAYhqQcucyoxSAItxOCMzqHiZyoIX56c9LyW7JFcx7iiVE1PMyOJu7T-7wZr7pNHRhmTpvdX7zr8nnU_qzfYl2Wg_Oo3DGKbrNblweh_tzWnOydvq8bV-Tpvt07peNimyQgyploIbNE60DiummeTSco7gBKsYcC65AN2i4UKUFloUzDAHDsHmmCMin5PsmIuhjzFYpw6h-9DhSwFVP7rqV1f96U7AwxHo-oPa9WPwU73_nr8BwFFVIw</recordid><startdate>20180409</startdate><enddate>20180409</enddate><creator>Gluschenkov, Oleg</creator><creator>Jagannathan, Hemanth</creator><general>The Electrochemical Society, Inc</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20180409</creationdate><title>(Invited) Laser Annealing in CMOS Manufacturing</title><author>Gluschenkov, Oleg ; Jagannathan, Hemanth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c274t-a643dcdf4bfc92a2636e33c1f42921336341abcd3448e1bc42d2f1fc1e5c5ccc3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2018</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Gluschenkov, Oleg</creatorcontrib><creatorcontrib>Jagannathan, Hemanth</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gluschenkov, Oleg</au><au>Jagannathan, Hemanth</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>(Invited) Laser Annealing in CMOS Manufacturing</atitle><btitle>ECS transactions</btitle><addtitle>ECS Trans</addtitle><date>2018-04-09</date><risdate>2018</risdate><volume>85</volume><issue>6</issue><spage>11</spage><epage>23</epage><pages>11-23</pages><issn>1938-5862</issn><issn>1938-6737</issn><eissn>1938-6737</eissn><eissn>1938-5862</eissn><abstract>Laser Annealing was introduced into mainstream CMOS manufacturing nearly a decade ago and since then has been evolving capturing new applications and expanding into new process regimes. This invited paper provides an overview of the adoption and the applications of millisecond-scale laser annealing in CMOS technologies. Building on the presented historical perspective, this paper then discusses and compares applications of nanosecond-scale laser annealing in future CMOS technologies. Mitigation of thermal pattern effects are also discussed in the context of different device architectures built on both bulk and SOI substrates.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/08506.0011ecst</doi><tpages>13</tpages></addata></record>
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ispartof ECS transactions, 2018, Vol.85 (6), p.11-23
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1938-6737
1938-6737
1938-5862
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title (Invited) Laser Annealing in CMOS Manufacturing
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-11T08%3A41%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=(Invited)%20Laser%20Annealing%20in%20CMOS%20Manufacturing&rft.btitle=ECS%20transactions&rft.au=Gluschenkov,%20Oleg&rft.date=2018-04-09&rft.volume=85&rft.issue=6&rft.spage=11&rft.epage=23&rft.pages=11-23&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/08506.0011ecst&rft_dat=%3Ciop_cross%3E10.1149/08506.0011ecst%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true