(Invited) Growth and Characterization of α -, β -, and ε -Ga 2 O 3 Epitaxial Layers on Sapphire

(Invited) Growth and Characterization of α -, β -, and ε -Ga 2 O 3 Epitaxial Layers on Sapphire

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Veröffentlicht in:ECS transactions 2017-08, Vol.80 (7), p.191-196
Hauptverfasser: Yao, Yao, Lyle, Luke A. M., Rokholt, Johanne A., Okur, Serdal, Tompa, Gary S., Salagaj, Tom, Sbrockey, Nick, Davis, Robert F., Porter, Lisa M.
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container_end_page 196
container_issue 7
container_start_page 191
container_title ECS transactions
container_volume 80
creator Yao, Yao
Lyle, Luke A. M.
Rokholt, Johanne A.
Okur, Serdal
Tompa, Gary S.
Salagaj, Tom
Sbrockey, Nick
Davis, Robert F.
Porter, Lisa M.
description
doi_str_mv 10.1149/08007.0191ecst
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_08007_0191ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_08007_0191ecst</sourcerecordid><originalsourceid>FETCH-LOGICAL-c84t-2494ea96509c700b6b3ed2f6f0c21bee5db1cddfcbaef7c0d67f821438b6264c3</originalsourceid><addsrcrecordid>eNo1kE1PAjEYhBujiYhePb9HTVzsx9LuHg0BJCHhIPfN269Qg-ymbVT8V5r4N_hNguJlZg4zc3gIuWZ0wFhZ39OKUjWgrGbOpHxCeqwWVTGsJD89ZqmEOicXKT1TKvcb1SP6ZrZ5DdnZW5jG9i2vADcWRiuMaLKL4QNzaDfQeth9QnEHu6-DHjq7byimCBwWIGDchYzvAdcwx62LCfabJ-y6VYjukpx5XCd3dfQ-WU7Gy9FjMV9MZ6OHeWGqMhe8rEuHtRzS2ihKtdTCWe6lp4Yz7dzQamas9Uaj88pQK5WvOCtFpSWXpRF9Mvi7NbFNKTrfdDG8YNw2jDYHQM0voOYfkPgBO0JaJw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>(Invited) Growth and Characterization of α -, β -, and ε -Ga 2 O 3 Epitaxial Layers on Sapphire</title><source>Institute of Physics Journals</source><creator>Yao, Yao ; Lyle, Luke A. M. ; Rokholt, Johanne A. ; Okur, Serdal ; Tompa, Gary S. ; Salagaj, Tom ; Sbrockey, Nick ; Davis, Robert F. ; Porter, Lisa M.</creator><creatorcontrib>Yao, Yao ; Lyle, Luke A. M. ; Rokholt, Johanne A. ; Okur, Serdal ; Tompa, Gary S. ; Salagaj, Tom ; Sbrockey, Nick ; Davis, Robert F. ; Porter, Lisa M.</creatorcontrib><identifier>ISSN: 1938-6737</identifier><identifier>EISSN: 1938-5862</identifier><identifier>DOI: 10.1149/08007.0191ecst</identifier><language>eng</language><ispartof>ECS transactions, 2017-08, Vol.80 (7), p.191-196</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c84t-2494ea96509c700b6b3ed2f6f0c21bee5db1cddfcbaef7c0d67f821438b6264c3</citedby><orcidid>0000-0001-7221-9624 ; 0000-0002-0391-3492 ; 0000-0002-4437-0885 ; 0000-0002-0970-0420</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yao, Yao</creatorcontrib><creatorcontrib>Lyle, Luke A. M.</creatorcontrib><creatorcontrib>Rokholt, Johanne A.</creatorcontrib><creatorcontrib>Okur, Serdal</creatorcontrib><creatorcontrib>Tompa, Gary S.</creatorcontrib><creatorcontrib>Salagaj, Tom</creatorcontrib><creatorcontrib>Sbrockey, Nick</creatorcontrib><creatorcontrib>Davis, Robert F.</creatorcontrib><creatorcontrib>Porter, Lisa M.</creatorcontrib><title>(Invited) Growth and Characterization of α -, β -, and ε -Ga 2 O 3 Epitaxial Layers on Sapphire</title><title>ECS transactions</title><issn>1938-6737</issn><issn>1938-5862</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo1kE1PAjEYhBujiYhePb9HTVzsx9LuHg0BJCHhIPfN269Qg-ymbVT8V5r4N_hNguJlZg4zc3gIuWZ0wFhZ39OKUjWgrGbOpHxCeqwWVTGsJD89ZqmEOicXKT1TKvcb1SP6ZrZ5DdnZW5jG9i2vADcWRiuMaLKL4QNzaDfQeth9QnEHu6-DHjq7byimCBwWIGDchYzvAdcwx62LCfabJ-y6VYjukpx5XCd3dfQ-WU7Gy9FjMV9MZ6OHeWGqMhe8rEuHtRzS2ihKtdTCWe6lp4Yz7dzQamas9Uaj88pQK5WvOCtFpSWXpRF9Mvi7NbFNKTrfdDG8YNw2jDYHQM0voOYfkPgBO0JaJw</recordid><startdate>20170817</startdate><enddate>20170817</enddate><creator>Yao, Yao</creator><creator>Lyle, Luke A. M.</creator><creator>Rokholt, Johanne A.</creator><creator>Okur, Serdal</creator><creator>Tompa, Gary S.</creator><creator>Salagaj, Tom</creator><creator>Sbrockey, Nick</creator><creator>Davis, Robert F.</creator><creator>Porter, Lisa M.</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-7221-9624</orcidid><orcidid>https://orcid.org/0000-0002-0391-3492</orcidid><orcidid>https://orcid.org/0000-0002-4437-0885</orcidid><orcidid>https://orcid.org/0000-0002-0970-0420</orcidid></search><sort><creationdate>20170817</creationdate><title>(Invited) Growth and Characterization of α -, β -, and ε -Ga 2 O 3 Epitaxial Layers on Sapphire</title><author>Yao, Yao ; Lyle, Luke A. M. ; Rokholt, Johanne A. ; Okur, Serdal ; Tompa, Gary S. ; Salagaj, Tom ; Sbrockey, Nick ; Davis, Robert F. ; Porter, Lisa M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c84t-2494ea96509c700b6b3ed2f6f0c21bee5db1cddfcbaef7c0d67f821438b6264c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Yao, Yao</creatorcontrib><creatorcontrib>Lyle, Luke A. M.</creatorcontrib><creatorcontrib>Rokholt, Johanne A.</creatorcontrib><creatorcontrib>Okur, Serdal</creatorcontrib><creatorcontrib>Tompa, Gary S.</creatorcontrib><creatorcontrib>Salagaj, Tom</creatorcontrib><creatorcontrib>Sbrockey, Nick</creatorcontrib><creatorcontrib>Davis, Robert F.</creatorcontrib><creatorcontrib>Porter, Lisa M.</creatorcontrib><collection>CrossRef</collection><jtitle>ECS transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yao, Yao</au><au>Lyle, Luke A. M.</au><au>Rokholt, Johanne A.</au><au>Okur, Serdal</au><au>Tompa, Gary S.</au><au>Salagaj, Tom</au><au>Sbrockey, Nick</au><au>Davis, Robert F.</au><au>Porter, Lisa M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>(Invited) Growth and Characterization of α -, β -, and ε -Ga 2 O 3 Epitaxial Layers on Sapphire</atitle><jtitle>ECS transactions</jtitle><date>2017-08-17</date><risdate>2017</risdate><volume>80</volume><issue>7</issue><spage>191</spage><epage>196</epage><pages>191-196</pages><issn>1938-6737</issn><eissn>1938-5862</eissn><doi>10.1149/08007.0191ecst</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-7221-9624</orcidid><orcidid>https://orcid.org/0000-0002-0391-3492</orcidid><orcidid>https://orcid.org/0000-0002-4437-0885</orcidid><orcidid>https://orcid.org/0000-0002-0970-0420</orcidid></addata></record>
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title (Invited) Growth and Characterization of α -, β -, and ε -Ga 2 O 3 Epitaxial Layers on Sapphire
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T18%3A27%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=(Invited)%20Growth%20and%20Characterization%20of%20%CE%B1%20-,%20%CE%B2%20-,%20and%20%CE%B5%20-Ga%202%20O%203%20Epitaxial%20Layers%20on%20Sapphire&rft.jtitle=ECS%20transactions&rft.au=Yao,%20Yao&rft.date=2017-08-17&rft.volume=80&rft.issue=7&rft.spage=191&rft.epage=196&rft.pages=191-196&rft.issn=1938-6737&rft.eissn=1938-5862&rft_id=info:doi/10.1149/08007.0191ecst&rft_dat=%3Ccrossref%3E10_1149_08007_0191ecst%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true