(Invited) ScAlN: A Novel Barrier Material for High Power GaN-Based RF Transistors

ScAlN is a novel group IIIA/IIIB-N alloy gaining interest for acoustoelectric applications. The high piezoelectric coefficients that make ScAlN appealing for RF filters combined with high spontaneous polarization have the potential to open up a new class of microwave and millimeter-wave high-electro...

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Bibliographische Detailangaben

Hauptverfasser:	Hardy, Matthew T., Downey, Brian P., Nepal, Neeraj, Storm, David F., Katzer, D. Scott, Meyer, David J.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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