Reduced Anisotropy in Tetramethylammonium Hydroxide Based Silicon Etchants

At sub-10 nm technology nodes, silicon etching is critical to FEOL processes. One of the keys to developing solutions for these applications is being able to control the anisotropy of the Si etch, or the etch selectivity between , , and . We have focused on the impact of modifications to tetramethyl...

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Bibliographische Detailangaben

Hauptverfasser:	Westwood, Glenn, Hsu, Chien-Pin Sherman
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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