(Invited) Wide Band-Gap on Its Hard Way up - The Trouble Starts Just Outside the Chip
Semiconductor chips made from silicon carbide (SiC) or gallium nitride (GaN) are already approaching the theoretical limits given by the respective wide band-gap (WBG) materials. Unfortunately, their advantages over silicon devices cannot be fully exploited due to limitations imposed by the device p...
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| Veröffentlicht in: | ECS transactions 2016-08, Vol.75 (12), p.21-27 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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