Microsecond Crystallization of Amorphous Silicon Films on Glass Substrates by Joule Heating

Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films was conducted by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. The phase-transformation phen...

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Bibliographische Detailangaben

Hauptverfasser:	Hong, Won-Eui, Ro, Jae-Sang
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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