(Invited) Low-Temperature Microwave-Based Plasma Oxidation of Ge and Oxidation of Silicon Followed by Plasma Nitridation

In the semiconductor industry Germanium is expected as the promising channel material for future high-mobility CMOS transistors because of its highest hole mobility among common elemental and compound semiconductors, and an electron mobility that is two times larger than that of Si. This article sho...

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Bibliographische Detailangaben

Hauptverfasser:	Lerch, Wilfried, Schick, T., Sacher, N., Kegel, W., Niess, J., Czernohorsky, M., Riedel, Stefan
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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