Effect of Buffer Oxide Etchant (BOE) on Ti/Al/Ni/Au Ohmic Contacts for AlGaN/GaN Based HEMT

The effects of buffer oxide etchant on Ti/Al/Ni/Au Ohmic contacts for AlGaN/GaN high electron mobility transistor were studied. Scanning electron microscopy (SEM), energy dispersive spectrum (EDX), and Auger electron spectroscopy (AES) were performed to investigate the degradation after treatment. C...

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Veröffentlicht in:	ECS transactions 2015-09, Vol.69 (14), p.111-118
Hauptverfasser:	Hwang, Ya-Hsi, Ahn, Shihyun, Dong, Chen, Zhu, Weidi, Kim, Byung-Jae, Ren, Fan, Lind, Aaron Gregg, Jones, Kevin Scott, Pearton, Stephen J., Kravchenko, Ivan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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