Process Optimization of CoSi 2 Formation on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

To achieve low resistivity contacts, the effect of annealing temperature and time on the resulting resistivity of CoSi 2 contacts with P-doped poly-Si was investigated using a single wafer furnace-based (hot wall) rapid thermal annealing (RTA) system. The hot wall RTA resulted in significantly (>...

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Veröffentlicht in:	ECS transactions 2015-03, Vol.66 (4), p.273-279
Hauptverfasser:	Lee, Jin Yul, Kim, Hun Joo, Kim, Eun Jeong, Song, Han Sang, Yeom, Seung Jin, Ishigaki, Toshikazu, Kang, Kitaek, Yoo, Woo Sik
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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