Manganese Precursor Selection and the Thermal Atomic Layer Deposition of Copper/Manganese Alloy Films

This paper describes the thermal ALD growth of Cu/Mn alloy films using the precursors Cu(OCHMeCH2NMe2)2, Mn2(tBuNCHC(tBu)(Me)O)4, and BH3(NHMe2) at 160 °C. Deposition rates of about 0.09 Å/cycle were observed on a variety of substrates. Cu:Mn ratios of about 70:30 were obtained by controlling the nu...

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Hauptverfasser:	Kalutarage, Lakmal C., Clendenning, Scott B., Winter, Charles H.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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