PECVD and Thermal Gate Oxides on 3C vs. 4H SiC - Impact on Leakage, Traps and Energy Offsets
Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD and thermal gate oxides on 3C- and 4H-SiC were compared. The difference in trap energy distributions between the polytypes demonstrated in this experiment confirms that the 3C-SiC poly...
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| creator | Gutt, Tomasz Przewlocki, Henryk Maria Piskorski, Krzysztof Mikhaylov, Aleksey Bakowski, Mietek |
| description | Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD and thermal gate oxides on 3C- and 4H-SiC were compared. The difference in trap energy distributions between the polytypes demonstrated in this experiment confirms that the 3C-SiC polytype is less vulnerable to near-interface traps (NIT) which are found in high density in the 4H-SiC. It was also shown that the nitridation of SiO2 on SiC improves the leakage properties of the gate oxides. Finally, the energy band model of the SiC MOS devices was described quantitatively which could be considered in further development of the devices and processes. |
| doi_str_mv | 10.1149/06407.0237ecst |
| format | Conference Proceeding |
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The difference in trap energy distributions between the polytypes demonstrated in this experiment confirms that the 3C-SiC polytype is less vulnerable to near-interface traps (NIT) which are found in high density in the 4H-SiC. It was also shown that the nitridation of SiO2 on SiC improves the leakage properties of the gate oxides. Finally, the energy band model of the SiC MOS devices was described quantitatively which could be considered in further development of the devices and processes.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/06407.0237ecst</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><subject>Band structure ; Energy band models ; Energy offset ; Gallium nitride ; Gate leakages ; Gate oxide ; Gates (transistor) ; Interface trap (NIT) ; Leakage currents ; MOS capacitors ; MOS devices ; Nitrides ; SiC substrates ; Silicon ; Silicon carbide ; Trap density ; Trap energy</subject><ispartof>ECS Transactions, 2014, Vol.64 (7), p.237-243</ispartof><rights>2014 ECS - The Electrochemical Society</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-d4005ba26b0144bcb83ae43b81fb239deab4c8f40a4379d114b3a22b1fede2103</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/06407.0237ecst/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>309,310,314,780,784,885,27924,27925,53846,53893</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-35489$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Gutt, Tomasz</creatorcontrib><creatorcontrib>Przewlocki, Henryk Maria</creatorcontrib><creatorcontrib>Piskorski, Krzysztof</creatorcontrib><creatorcontrib>Mikhaylov, Aleksey</creatorcontrib><creatorcontrib>Bakowski, Mietek</creatorcontrib><title>PECVD and Thermal Gate Oxides on 3C vs. 4H SiC - Impact on Leakage, Traps and Energy Offsets</title><title>ECS Transactions</title><addtitle>ECS Trans</addtitle><description>Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD and thermal gate oxides on 3C- and 4H-SiC were compared. 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Finally, the energy band model of the SiC MOS devices was described quantitatively which could be considered in further development of the devices and processes.</description><subject>Band structure</subject><subject>Energy band models</subject><subject>Energy offset</subject><subject>Gallium nitride</subject><subject>Gate leakages</subject><subject>Gate oxide</subject><subject>Gates (transistor)</subject><subject>Interface trap (NIT)</subject><subject>Leakage currents</subject><subject>MOS capacitors</subject><subject>MOS devices</subject><subject>Nitrides</subject><subject>SiC substrates</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Trap density</subject><subject>Trap energy</subject><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2014</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp1kEtPwzAQhC0EEqVw5ewzkGDHzutYpaWtVKlIhJ6QrHWyKSltEtkp0H9P-oAbp11pvxntDCG3nLmcy_iRBZKFLvNEiJltz0iPxyJyglCE56fdjwLvklxZu2Is6DRhj7w9j5LFkEKV0_QdzQbWdAwt0vl3maOldUVFQj-tS-WEvpQJdeh000DW7i8zhA9Y4gNNDTT24DGq0Cx3dF4UFlt7TS4KWFu8Oc0-eX0apcnEmc3H02QwczLhs9bJJWO-Bi_QjEupMx0JQCl0xAvtiThH0DKLCslAijDOu8e1AM_TvMAcPc5En9wffe0XNlutGlNuwOxUDaUalouBqs1SmVIJX0ZxR7tHOjO1tQaLP54ztW9SHZpUv012grujoKwbtaq3purC_Af_APgUcho</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Gutt, Tomasz</creator><creator>Przewlocki, Henryk Maria</creator><creator>Piskorski, Krzysztof</creator><creator>Mikhaylov, Aleksey</creator><creator>Bakowski, Mietek</creator><general>The Electrochemical Society, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ADTPV</scope><scope>BNKNJ</scope></search><sort><creationdate>20140101</creationdate><title>PECVD and Thermal Gate Oxides on 3C vs. 4H SiC - Impact on Leakage, Traps and Energy Offsets</title><author>Gutt, Tomasz ; Przewlocki, Henryk Maria ; Piskorski, Krzysztof ; Mikhaylov, Aleksey ; Bakowski, Mietek</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-d4005ba26b0144bcb83ae43b81fb239deab4c8f40a4379d114b3a22b1fede2103</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Band structure</topic><topic>Energy band models</topic><topic>Energy offset</topic><topic>Gallium nitride</topic><topic>Gate leakages</topic><topic>Gate oxide</topic><topic>Gates (transistor)</topic><topic>Interface trap (NIT)</topic><topic>Leakage currents</topic><topic>MOS capacitors</topic><topic>MOS devices</topic><topic>Nitrides</topic><topic>SiC substrates</topic><topic>Silicon</topic><topic>Silicon carbide</topic><topic>Trap density</topic><topic>Trap energy</topic><toplevel>online_resources</toplevel><creatorcontrib>Gutt, Tomasz</creatorcontrib><creatorcontrib>Przewlocki, Henryk Maria</creatorcontrib><creatorcontrib>Piskorski, Krzysztof</creatorcontrib><creatorcontrib>Mikhaylov, Aleksey</creatorcontrib><creatorcontrib>Bakowski, Mietek</creatorcontrib><collection>CrossRef</collection><collection>SwePub</collection><collection>SwePub Conference</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gutt, Tomasz</au><au>Przewlocki, Henryk Maria</au><au>Piskorski, Krzysztof</au><au>Mikhaylov, Aleksey</au><au>Bakowski, Mietek</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>PECVD and Thermal Gate Oxides on 3C vs. 4H SiC - Impact on Leakage, Traps and Energy Offsets</atitle><btitle>ECS Transactions</btitle><addtitle>ECS Trans</addtitle><date>2014-01-01</date><risdate>2014</risdate><volume>64</volume><issue>7</issue><spage>237</spage><epage>243</epage><pages>237-243</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD and thermal gate oxides on 3C- and 4H-SiC were compared. The difference in trap energy distributions between the polytypes demonstrated in this experiment confirms that the 3C-SiC polytype is less vulnerable to near-interface traps (NIT) which are found in high density in the 4H-SiC. It was also shown that the nitridation of SiO2 on SiC improves the leakage properties of the gate oxides. Finally, the energy band model of the SiC MOS devices was described quantitatively which could be considered in further development of the devices and processes.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/06407.0237ecst</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1938-5862 |
| ispartof | ECS Transactions, 2014, Vol.64 (7), p.237-243 |
| issn | 1938-5862 1938-6737 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_06407_0237ecst |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Band structure Energy band models Energy offset Gallium nitride Gate leakages Gate oxide Gates (transistor) Interface trap (NIT) Leakage currents MOS capacitors MOS devices Nitrides SiC substrates Silicon Silicon carbide Trap density Trap energy |
| title | PECVD and Thermal Gate Oxides on 3C vs. 4H SiC - Impact on Leakage, Traps and Energy Offsets |
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