Advances in Diamond Integration for Thermal Management in GaN Power HEMTs

GaN high electron mobility transistors (HEMTs) performance is limited by self-heating during high power operation. Topside nanocrystalline diamond (NCD) layers have been integrated on AlGaN/GaN (HEMTs) to improve thermal management, exhibiting a 20%. decrease in peak channel temperature compared to...

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Veröffentlicht in:	ECS transactions 2014-08, Vol.64 (7), p.185-190
Hauptverfasser:	Anderson, Travis J, Hobart, Karl D, Tadjer, Marko J, Koehler, Andrew D., Feygelson, Tatyana I, Pate, Bradford B, Hite, Jennifer K., Kub, Fritz J, Eddy, Charles R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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