Progress in SiC MOSFET Reliability

In this work, we have characterized a variety of SiC devices (first- and second-generation 1200 V SiC MOSFETs and 1200 V SiC JFETs) with regards to threshold voltage shifts and leakage currents at high temperatures under both static and dynamic gate bias stress conditions. It was found that, althoug...

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Veröffentlicht in:	ECS transactions 2014-08, Vol.64 (7), p.87-98
Hauptverfasser:	Flicker, Jack D., Hughart, David R., Atcitty, Stan, Kaplar, Robert J., Marinella, Matthew
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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