Electrical, Mechanical, and Hermeticity Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

The electrical, mechanical, and hermeticity properties of low-temperature, plasma activated direct silicon bonds were investigated. On individual dies with a bonding area ranging from 1 - 4 mm2, the bonded interface was found to have a capacitance ranging from 2.62 pF/mm2 - 2.89 pF/mm2 at 1 kHz. Lin...

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Hauptverfasser:	Schjølberg-Henriksen, Kari, Malik, Nishant, Gundersen, Elin Vold, Christiansen, Oscar Rincon, Imenes, Kristin, Moe, Sigurd Teodor
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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