(Invited) AlGaN/GaN HEMT Reliability and Trap Detection Using Optical Pumping
Changes in the drain current that correspond to charge trap energies in the band-gap of AlGaN/GaN High Electron Mobility Transistors (HEMTs) were measured when illuminated by below band-gap light. The energy of the applied wavelength of light affects the trapping and de-trapping of carriers within t...
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| Veröffentlicht in: | ECS transactions 2014-03, Vol.61 (4), p.197-204 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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