Investigation on Pad Surface Conditioner to Control Dishing Amount in Cu Damascene Process
In the Cu damascene chemical mechanical planarization (CMP) process, dynamic interaction of wafer and pad surfaces is a mechanism of material removal to prepare flat layer on wafer surface. During the interaction, chemical and mechanical effects are working at the same time to get the desired surfac...
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| Veröffentlicht in: | ECS transactions 2014-02, Vol.58 (17), p.37-44 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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