Hot Hole-Induced Device Degradation by Drain Junction Reverse Current

We studied device degradation by hot hole under drain junction reverse voltage stress with n-type metal-oxide- semiconductor field effect transistors (N-MOSFETs). The drain current generated under high drain voltage in the off-state are the drain junction reverse current and gate-induced drain leaka...

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Veröffentlicht in:	ECS transactions 2014-03, Vol.58 (16), p.23-30
Hauptverfasser:	Kim, Kwang-Soo, Song, Juneui, Song, Duheon, Choi, Byoungdeog
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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