High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications

In-situ phosphorus doped silicon epitaxial film with 2.8 X 1021cm-3 doping level is found to show high tensile stress comparable to carbon doped silicon with 1.8% substitutional carbon. As-grown samples show electrically activated dopant concentration of less than 2 X 1020 cm-3. The high tensile and...

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Hauptverfasser:	Ye, Zhiyuan, Chopra, Saurabh, Lapena, Rubi, Kim, Yihwan, Kuppurao, Satheesh
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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