Stress-Induced Performance Shifts in 3D DRAMs
3D-stacked DRAMs can significantly increase cell density and bandwidth while also lowering power consumption. However, 3D structures experience significant thermomechanical stress due to the differential rate of contraction of the constituent materials, which have different coefficients of thermal e...
Gespeichert in:
Veröffentlicht in: | ACM transactions on design automation of electronic systems 2019-10, Vol.24 (5), p.1-21 |
---|---|
Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!