Recovering from Biased Distribution of Faulty Cells in Memory by Reorganizing Replacement Regions through Universal Hashing

Recently, scaling down dynamic random access memory (DRAM) has become more of a challenge, with more faults than before and a significant degradation in yield. To improve the yield in DRAM, a redundancy repair technique with intra-subarray replacement has been extensively employed to replace faulty...

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Veröffentlicht in:	ACM transactions on design automation of electronic systems 2018-03, Vol.23 (2), p.1-21
Hauptverfasser:	Jun, Jaeyung, Choi, Kyu Hyun, Kim, Hokwon, Yu, Sang Ho, Kim, Seon Wook, Han, Youngsun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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