Effect of Heat Treatment on Gallium Arsenide Crystals III. Electrical Properties of Thermally Converted p-Type Crystals
Electrical properties were measured from 77° to 400°K for p -GaAs crystals obtained by heat treatment of melt-grown undoped n -GaAs crystals in arsenic vapor. Temperature dependence of hole concentration was best explained with a double acceptor level scheme, in which the first and the second ioniza...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1970, Vol.9 (4), p.376 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!