Avalanche Breakdown Voltages in Punch-Through Si Epitaxial Planar Schottky Barrier Diodes

Avalanche Breakdown Voltages in Punch-Through Si Epitaxial Planar Schottky Barrier Diodes

Avalanche breakdown voltages in punch-through epitaxial Schottky barrier diodes have been calculated by the computor more fundamentally than previously reported by the author. And the experimental results obtained in this paper by introducing a new technique–Insertion of Channel-Stopping Guard Space...

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Veröffentlicht in:Japanese Journal of Applied Physics 1969-01, Vol.8 (4), p.463
1. Verfasser: Kano, Gota
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container_title Japanese Journal of Applied Physics
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creator Kano, Gota
description Avalanche breakdown voltages in punch-through epitaxial Schottky barrier diodes have been calculated by the computor more fundamentally than previously reported by the author. And the experimental results obtained in this paper by introducing a new technique–Insertion of Channel-Stopping Guard Space–have approached to this theoretical limit.
doi_str_mv 10.1143/JJAP.8.463
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title Avalanche Breakdown Voltages in Punch-Through Si Epitaxial Planar Schottky Barrier Diodes
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