Light Doping of Sn into Vapor Grown GaAs
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1969-01, Vol.8 (2), p.280 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
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| container_issue | 2 |
| container_start_page | 280 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 8 |
| creator | Mizuno, Osamu Kikuchi, Sadao |
| description | |
| doi_str_mv | 10.1143/JJAP.8.280 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1969-01, Vol.8 (2), p.280 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_8_280 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Light Doping of Sn into Vapor Grown GaAs |
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