Characterization of Highly Concentrated Bi Donors Wire-$\delta$-Doped in Si

We studied the Bi wire-$\delta$-doping process to achieve a high concentration of Bi donors in Si. Our process has two steps: (i) burial of Bi nanowires in Si by molecular beam epitaxy, and (ii) activation of Bi atoms in the $\delta$-doped layer by laser annealing. The peak concentration of Bi atoms...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2012-11, Vol.51 (11), p.11PE05-11PE05-4
Hauptverfasser:	Murata, Koichi, Neumann, Péter Lajos, Koyano, Tamotsu, Yasutake, Yuhsuke, Nittoh, Koh-ichi, Sakamoto, Kunihiro, Fukatsu, Susumu, Miki, Kazushi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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