Structure and Composition Analysis of Cu(In,Al)Se 2 Thin Films Prepared by Rapid Thermal Selenization

Thin films of CuIn 1- x Al x Se 2 (CIAS) were prepared by stacked elemental precursor layers in an inert ambient. The stacking sequence of precursor layers may affect the kinetics of phase formation. The soda lime glass (SLG)/Cu/Al/In/Se sample heated at 750 °C for 30 s with a temperature ramp rate of 15 °C/s may react to form single-phase CIAS thin films with a chemical composition fairly close to the predetermined value. Transmission electron microscopy (TEM) analysis of a selenized film prepared at 600 °C revealed the segregation of the content of Al to the substrate side and a relatively large variation of Al distributed in a lateral direction as compared with those of other elements. Changing the Cu and Al layer sequence may affect the reaction paths and lead to the formation of a mixture of two CIAS quaternary phases with different compositions.