Selective Removal of Dry-Etching Residue Derived from Polymer Sacrificial Layer for Microelectromechanical-System Device Fabrication

A selective removal of dry-etching residue using hydrofluoric acid (HF) vapor is described in relation to the fabrication of microelectromechanical-system (MEMS) devices. Auger electron spectroscopy (AES) analysis of residue after dry etching of polymer sacrificial layers reveals that the residue is...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2012-09, Vol.51 (9), p.096502-096502-5
Hauptverfasser:	Takagahara, Kazuhiko, Kuwabara, Kei, Sakata, Tomomi, Ishii, Hiromu, Sato, Yasuhiro, Jin, Yoshito
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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