Nanomechanical Thermal Analysis of Indium Films Using Silicon Microcantilevers

Indium thin films of different thicknesses were vacuum-deposited onto silicon microcantilevers. The temperature-dependent variations in the resonance frequency and deflection of the cantilevers were measured simultaneously and were used to determine the melting and crystallization temperatures of th...

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Veröffentlicht in:Japanese Journal of Applied Physics 2012-08, Vol.51 (8), p.08KB07-08KB07-4
Hauptverfasser: Yim, Changyong, Yun, Minhyuk, Kim, Seonghwan, Jung, Namchul, Lim, Sang-Hoon, Lee, Moonchan, Rhee, Shi-Woo, Thundat, Thomas, Jeon, Sangmin
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container_end_page 08KB07-4
container_issue 8
container_start_page 08KB07
container_title Japanese Journal of Applied Physics
container_volume 51
creator Yim, Changyong
Yun, Minhyuk
Kim, Seonghwan
Jung, Namchul
Lim, Sang-Hoon
Lee, Moonchan
Rhee, Shi-Woo
Thundat, Thomas
Jeon, Sangmin
description Indium thin films of different thicknesses were vacuum-deposited onto silicon microcantilevers. The temperature-dependent variations in the resonance frequency and deflection of the cantilevers were measured simultaneously and were used to determine the melting and crystallization temperatures of the indium films. The melting temperatures of the indium films were identical to that of bulk indium, whereas the crystallization temperatures decreased as the film thickness decreased. The reduction in crystallization temperature with decreasing thickness can be attributed to the tendency of thin films to homogeneously nucleate on nonwetting surfaces. Finally, the temperature-dependent variations in the Young's modulus and surface stress of the indium film were calculated.
doi_str_mv 10.1143/JJAP.51.08KB07
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title Nanomechanical Thermal Analysis of Indium Films Using Silicon Microcantilevers
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