An Autonomously Controllable Plasma Etching System Based on Radical Monitoring

The optimum conditions for a plasma etching device are generally determined from the results of etching a sample while varying an external parameter (e.g., gas mass flow, gas mixing ratio, process chamber pressure, or plasma source power). However, to realize controlled plasma etching with few fluct...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2012-07, Vol.51 (7), p.076502-076502-6
Hauptverfasser:	Takahashi, Shunji, Kawauchi, Ryota, Takashima, Seigo, Den, Shoji, Katagiri, Toshiro, Kano, Hiroyuki, Ohta, Takayuki, Ito, Masafumi, Suzuki, Tatsuya, Takeda, Keigo, Hori, Masaru
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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