Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source
We have developed a time-resolved surface photoelectron spectroscopy system based on a 1.5 eV laser-pump and 92 eV high-order harmonic probe configuration that enables us to measure the electron and hole dynamics on a semiconductor surface. Core-level photoelectron spectra of GaAs(001) were successf...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2012-07, Vol.51 (7), p.072401-072401-6 |
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container_end_page | 072401-6 |
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container_issue | 7 |
container_start_page | 072401 |
container_title | Japanese Journal of Applied Physics |
container_volume | 51 |
creator | Oguri, Katsuya Kato, Keiko Nishikawa, Tadashi Gotoh, Hideki Tateno, Kouta Sogawa, Tetsuomi Nakano, Hidetoshi |
description | We have developed a time-resolved surface photoelectron spectroscopy system based on a 1.5 eV laser-pump and 92 eV high-order harmonic probe configuration that enables us to measure the electron and hole dynamics on a semiconductor surface. Core-level photoelectron spectra of GaAs(001) were successfully obtained with a single 59th harmonic, which was selected by using a pair of Mo/Si multilayer mirrors with a narrow reflection bandwidth. We observed transient energy shifts of the Ga 3d core level photoelectron peak of approximately 200 meV towards a higher binding energy, indicating that the surface potential changed due to the spatial separation of electron--hole pairs generated by the laser irradiation. The relatively slow recovery of the Ga 3d core level shift with a time constant of a few ns is dominated by the recombination process of the excess surface charges generated by the laser irradiation. |
doi_str_mv | 10.1143/JJAP.51.072401 |
format | Article |
fullrecord | <record><control><sourceid>ipap_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_51_072401</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_51_072401</sourcerecordid><originalsourceid>FETCH-LOGICAL-c367t-ab55e5a73490cee7c495fedb9e143214ade667c83d0e087873d072ea55f6d35f3</originalsourceid><addsrcrecordid>eNqFUEFOwzAQtBBIlMKVs89ICXZix82xKqWlqkRFW66R66zBKIkjO0XkAfwbl5Yzp53dnRlpBqFbSmJKWXq_WIxXMacxEQkj9AwNaMpExEjGz9GAkIRGLE-SS3Tl_UdYM87oAH1vTA3RC3hbfUKJ13unpQK8eredhQpU52yD1-0v8Mq2Pbb69P1SpguS6R9LNiWe2wrwQ9_I2iiPw3Emxx5vvWnecJ5geMVL6cHhuXS1bYzCa7t3Cq7RhZaVh5vTHKLt43QzmUfL59nTZLyMVJqJLpI7zoFLkbKcKAChWM41lLscQv6EMllClgk1SksCZCRGIgCRgORcZ2XKdTpE8dFXhTTegS5aZ2rp-oKS4lBicSix4LQ4lhgEd0eBaWX7H_kH9fpzQg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source</title><source>Institute of Physics Journals</source><creator>Oguri, Katsuya ; Kato, Keiko ; Nishikawa, Tadashi ; Gotoh, Hideki ; Tateno, Kouta ; Sogawa, Tetsuomi ; Nakano, Hidetoshi</creator><creatorcontrib>Oguri, Katsuya ; Kato, Keiko ; Nishikawa, Tadashi ; Gotoh, Hideki ; Tateno, Kouta ; Sogawa, Tetsuomi ; Nakano, Hidetoshi</creatorcontrib><description>We have developed a time-resolved surface photoelectron spectroscopy system based on a 1.5 eV laser-pump and 92 eV high-order harmonic probe configuration that enables us to measure the electron and hole dynamics on a semiconductor surface. Core-level photoelectron spectra of GaAs(001) were successfully obtained with a single 59th harmonic, which was selected by using a pair of Mo/Si multilayer mirrors with a narrow reflection bandwidth. We observed transient energy shifts of the Ga 3d core level photoelectron peak of approximately 200 meV towards a higher binding energy, indicating that the surface potential changed due to the spatial separation of electron--hole pairs generated by the laser irradiation. The relatively slow recovery of the Ga 3d core level shift with a time constant of a few ns is dominated by the recombination process of the excess surface charges generated by the laser irradiation.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.51.072401</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Japanese Journal of Applied Physics, 2012-07, Vol.51 (7), p.072401-072401-6</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-ab55e5a73490cee7c495fedb9e143214ade667c83d0e087873d072ea55f6d35f3</citedby><cites>FETCH-LOGICAL-c367t-ab55e5a73490cee7c495fedb9e143214ade667c83d0e087873d072ea55f6d35f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Oguri, Katsuya</creatorcontrib><creatorcontrib>Kato, Keiko</creatorcontrib><creatorcontrib>Nishikawa, Tadashi</creatorcontrib><creatorcontrib>Gotoh, Hideki</creatorcontrib><creatorcontrib>Tateno, Kouta</creatorcontrib><creatorcontrib>Sogawa, Tetsuomi</creatorcontrib><creatorcontrib>Nakano, Hidetoshi</creatorcontrib><title>Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source</title><title>Japanese Journal of Applied Physics</title><description>We have developed a time-resolved surface photoelectron spectroscopy system based on a 1.5 eV laser-pump and 92 eV high-order harmonic probe configuration that enables us to measure the electron and hole dynamics on a semiconductor surface. Core-level photoelectron spectra of GaAs(001) were successfully obtained with a single 59th harmonic, which was selected by using a pair of Mo/Si multilayer mirrors with a narrow reflection bandwidth. We observed transient energy shifts of the Ga 3d core level photoelectron peak of approximately 200 meV towards a higher binding energy, indicating that the surface potential changed due to the spatial separation of electron--hole pairs generated by the laser irradiation. The relatively slow recovery of the Ga 3d core level shift with a time constant of a few ns is dominated by the recombination process of the excess surface charges generated by the laser irradiation.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFUEFOwzAQtBBIlMKVs89ICXZix82xKqWlqkRFW66R66zBKIkjO0XkAfwbl5Yzp53dnRlpBqFbSmJKWXq_WIxXMacxEQkj9AwNaMpExEjGz9GAkIRGLE-SS3Tl_UdYM87oAH1vTA3RC3hbfUKJ13unpQK8eredhQpU52yD1-0v8Mq2Pbb69P1SpguS6R9LNiWe2wrwQ9_I2iiPw3Emxx5vvWnecJ5geMVL6cHhuXS1bYzCa7t3Cq7RhZaVh5vTHKLt43QzmUfL59nTZLyMVJqJLpI7zoFLkbKcKAChWM41lLscQv6EMllClgk1SksCZCRGIgCRgORcZ2XKdTpE8dFXhTTegS5aZ2rp-oKS4lBicSix4LQ4lhgEd0eBaWX7H_kH9fpzQg</recordid><startdate>20120701</startdate><enddate>20120701</enddate><creator>Oguri, Katsuya</creator><creator>Kato, Keiko</creator><creator>Nishikawa, Tadashi</creator><creator>Gotoh, Hideki</creator><creator>Tateno, Kouta</creator><creator>Sogawa, Tetsuomi</creator><creator>Nakano, Hidetoshi</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120701</creationdate><title>Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source</title><author>Oguri, Katsuya ; Kato, Keiko ; Nishikawa, Tadashi ; Gotoh, Hideki ; Tateno, Kouta ; Sogawa, Tetsuomi ; Nakano, Hidetoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-ab55e5a73490cee7c495fedb9e143214ade667c83d0e087873d072ea55f6d35f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Oguri, Katsuya</creatorcontrib><creatorcontrib>Kato, Keiko</creatorcontrib><creatorcontrib>Nishikawa, Tadashi</creatorcontrib><creatorcontrib>Gotoh, Hideki</creatorcontrib><creatorcontrib>Tateno, Kouta</creatorcontrib><creatorcontrib>Sogawa, Tetsuomi</creatorcontrib><creatorcontrib>Nakano, Hidetoshi</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Oguri, Katsuya</au><au>Kato, Keiko</au><au>Nishikawa, Tadashi</au><au>Gotoh, Hideki</au><au>Tateno, Kouta</au><au>Sogawa, Tetsuomi</au><au>Nakano, Hidetoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2012-07-01</date><risdate>2012</risdate><volume>51</volume><issue>7</issue><spage>072401</spage><epage>072401-6</epage><pages>072401-072401-6</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>We have developed a time-resolved surface photoelectron spectroscopy system based on a 1.5 eV laser-pump and 92 eV high-order harmonic probe configuration that enables us to measure the electron and hole dynamics on a semiconductor surface. Core-level photoelectron spectra of GaAs(001) were successfully obtained with a single 59th harmonic, which was selected by using a pair of Mo/Si multilayer mirrors with a narrow reflection bandwidth. We observed transient energy shifts of the Ga 3d core level photoelectron peak of approximately 200 meV towards a higher binding energy, indicating that the surface potential changed due to the spatial separation of electron--hole pairs generated by the laser irradiation. The relatively slow recovery of the Ga 3d core level shift with a time constant of a few ns is dominated by the recombination process of the excess surface charges generated by the laser irradiation.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/JJAP.51.072401</doi></addata></record> |
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title | Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source |
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