Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells
The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing vo...
Gespeichert in:
Veröffentlicht in: | Japanese Journal of Applied Physics 2012-07, Vol.51 (7), p.072301-072301-4 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 072301-4 |
---|---|
container_issue | 7 |
container_start_page | 072301 |
container_title | Japanese Journal of Applied Physics |
container_volume | 51 |
creator | Shu, Gia-Wei Yang, Jun-Jie Shu, I-Jen Shen, Ji-Lin Yang, Min-De Wu, Chih-Hung Huang, Ying-Sheng |
description | The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing voltage and illumination level. The theoretical electric fields as a function of the biasing voltage and the photocurrent are calculated on the basis of the depletion approximation in the junction theory and the photovoltaic effect, respectively. |
doi_str_mv | 10.1143/JJAP.51.072301 |
format | Article |
fullrecord | <record><control><sourceid>ipap_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_51_072301</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_51_072301</sourcerecordid><originalsourceid>FETCH-LOGICAL-c367t-b774fc976cba6791520dd4357383a86e34dadec5ef3f72937f28cdca7bc5950d3</originalsourceid><addsrcrecordid>eNqFkE1PAjEYhBujiYhePfdssms_t-wRUBBCIokf101p30JN6W7aJcZ_LwTvnmYmmZnDg9A9JSWlgj8ul-N1KWlJFOOEXqAB5UIVglTyEg0IYbQQNWPX6Cbnr2OspKADtHuCDqKFaAC3Dk-8zj5u8Wcber0FrKPFixAOex9179uI1-03JHw0_Q7w5OBDX_iInwOYPnmDZx6CPR0t4lyv8VsbdMJTCCHfoiunQ4a7Px2ij9nz-_SlWL3OF9PxqjC8Un2xUUo4U6vKbHSlaioZsVZwqfiI61EFXFhtwUhw3ClWc-XYyFij1cbIWhLLh6g8_5rU5pzANV3ye51-GkqaE6fmxKmRtDlzOg4ezgPf6e6_8i-YT2gZ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells</title><source>Institute of Physics Journals</source><creator>Shu, Gia-Wei ; Yang, Jun-Jie ; Shu, I-Jen ; Shen, Ji-Lin ; Yang, Min-De ; Wu, Chih-Hung ; Huang, Ying-Sheng</creator><creatorcontrib>Shu, Gia-Wei ; Yang, Jun-Jie ; Shu, I-Jen ; Shen, Ji-Lin ; Yang, Min-De ; Wu, Chih-Hung ; Huang, Ying-Sheng</creatorcontrib><description>The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing voltage and illumination level. The theoretical electric fields as a function of the biasing voltage and the photocurrent are calculated on the basis of the depletion approximation in the junction theory and the photovoltaic effect, respectively.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.51.072301</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Japanese Journal of Applied Physics, 2012-07, Vol.51 (7), p.072301-072301-4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-b774fc976cba6791520dd4357383a86e34dadec5ef3f72937f28cdca7bc5950d3</citedby><cites>FETCH-LOGICAL-c367t-b774fc976cba6791520dd4357383a86e34dadec5ef3f72937f28cdca7bc5950d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Shu, Gia-Wei</creatorcontrib><creatorcontrib>Yang, Jun-Jie</creatorcontrib><creatorcontrib>Shu, I-Jen</creatorcontrib><creatorcontrib>Shen, Ji-Lin</creatorcontrib><creatorcontrib>Yang, Min-De</creatorcontrib><creatorcontrib>Wu, Chih-Hung</creatorcontrib><creatorcontrib>Huang, Ying-Sheng</creatorcontrib><title>Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells</title><title>Japanese Journal of Applied Physics</title><description>The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing voltage and illumination level. The theoretical electric fields as a function of the biasing voltage and the photocurrent are calculated on the basis of the depletion approximation in the junction theory and the photovoltaic effect, respectively.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkE1PAjEYhBujiYhePfdssms_t-wRUBBCIokf101p30JN6W7aJcZ_LwTvnmYmmZnDg9A9JSWlgj8ul-N1KWlJFOOEXqAB5UIVglTyEg0IYbQQNWPX6Cbnr2OspKADtHuCDqKFaAC3Dk-8zj5u8Wcber0FrKPFixAOex9179uI1-03JHw0_Q7w5OBDX_iInwOYPnmDZx6CPR0t4lyv8VsbdMJTCCHfoiunQ4a7Px2ij9nz-_SlWL3OF9PxqjC8Un2xUUo4U6vKbHSlaioZsVZwqfiI61EFXFhtwUhw3ClWc-XYyFij1cbIWhLLh6g8_5rU5pzANV3ye51-GkqaE6fmxKmRtDlzOg4ezgPf6e6_8i-YT2gZ</recordid><startdate>20120701</startdate><enddate>20120701</enddate><creator>Shu, Gia-Wei</creator><creator>Yang, Jun-Jie</creator><creator>Shu, I-Jen</creator><creator>Shen, Ji-Lin</creator><creator>Yang, Min-De</creator><creator>Wu, Chih-Hung</creator><creator>Huang, Ying-Sheng</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120701</creationdate><title>Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells</title><author>Shu, Gia-Wei ; Yang, Jun-Jie ; Shu, I-Jen ; Shen, Ji-Lin ; Yang, Min-De ; Wu, Chih-Hung ; Huang, Ying-Sheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-b774fc976cba6791520dd4357383a86e34dadec5ef3f72937f28cdca7bc5950d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shu, Gia-Wei</creatorcontrib><creatorcontrib>Yang, Jun-Jie</creatorcontrib><creatorcontrib>Shu, I-Jen</creatorcontrib><creatorcontrib>Shen, Ji-Lin</creatorcontrib><creatorcontrib>Yang, Min-De</creatorcontrib><creatorcontrib>Wu, Chih-Hung</creatorcontrib><creatorcontrib>Huang, Ying-Sheng</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shu, Gia-Wei</au><au>Yang, Jun-Jie</au><au>Shu, I-Jen</au><au>Shen, Ji-Lin</au><au>Yang, Min-De</au><au>Wu, Chih-Hung</au><au>Huang, Ying-Sheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2012-07-01</date><risdate>2012</risdate><volume>51</volume><issue>7</issue><spage>072301</spage><epage>072301-4</epage><pages>072301-072301-4</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing voltage and illumination level. The theoretical electric fields as a function of the biasing voltage and the photocurrent are calculated on the basis of the depletion approximation in the junction theory and the photovoltaic effect, respectively.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/JJAP.51.072301</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-4922 |
ispartof | Japanese Journal of Applied Physics, 2012-07, Vol.51 (7), p.072301-072301-4 |
issn | 0021-4922 1347-4065 |
language | eng |
recordid | cdi_crossref_primary_10_1143_JJAP_51_072301 |
source | Institute of Physics Journals |
title | Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T19%3A17%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ipap_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dependence%20of%20Biasing%20Voltage%20and%20Illumination%20Power%20on%20the%20Built-in%20Electric%20Field%20of%20InGaP%20Solar%20Cells&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Shu,%20Gia-Wei&rft.date=2012-07-01&rft.volume=51&rft.issue=7&rft.spage=072301&rft.epage=072301-4&rft.pages=072301-072301-4&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.51.072301&rft_dat=%3Cipap_cross%3E10_1143_JJAP_51_072301%3C/ipap_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |