Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells

The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing vo...

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Veröffentlicht in:Japanese Journal of Applied Physics 2012-07, Vol.51 (7), p.072301-072301-4
Hauptverfasser: Shu, Gia-Wei, Yang, Jun-Jie, Shu, I-Jen, Shen, Ji-Lin, Yang, Min-De, Wu, Chih-Hung, Huang, Ying-Sheng
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container_end_page 072301-4
container_issue 7
container_start_page 072301
container_title Japanese Journal of Applied Physics
container_volume 51
creator Shu, Gia-Wei
Yang, Jun-Jie
Shu, I-Jen
Shen, Ji-Lin
Yang, Min-De
Wu, Chih-Hung
Huang, Ying-Sheng
description The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing voltage and illumination level. The theoretical electric fields as a function of the biasing voltage and the photocurrent are calculated on the basis of the depletion approximation in the junction theory and the photovoltaic effect, respectively.
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fullrecord <record><control><sourceid>ipap_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_51_072301</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_51_072301</sourcerecordid><originalsourceid>FETCH-LOGICAL-c367t-b774fc976cba6791520dd4357383a86e34dadec5ef3f72937f28cdca7bc5950d3</originalsourceid><addsrcrecordid>eNqFkE1PAjEYhBujiYhePfdssms_t-wRUBBCIokf101p30JN6W7aJcZ_LwTvnmYmmZnDg9A9JSWlgj8ul-N1KWlJFOOEXqAB5UIVglTyEg0IYbQQNWPX6Cbnr2OspKADtHuCDqKFaAC3Dk-8zj5u8Wcber0FrKPFixAOex9179uI1-03JHw0_Q7w5OBDX_iInwOYPnmDZx6CPR0t4lyv8VsbdMJTCCHfoiunQ4a7Px2ij9nz-_SlWL3OF9PxqjC8Un2xUUo4U6vKbHSlaioZsVZwqfiI61EFXFhtwUhw3ClWc-XYyFij1cbIWhLLh6g8_5rU5pzANV3ye51-GkqaE6fmxKmRtDlzOg4ezgPf6e6_8i-YT2gZ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells</title><source>Institute of Physics Journals</source><creator>Shu, Gia-Wei ; Yang, Jun-Jie ; Shu, I-Jen ; Shen, Ji-Lin ; Yang, Min-De ; Wu, Chih-Hung ; Huang, Ying-Sheng</creator><creatorcontrib>Shu, Gia-Wei ; Yang, Jun-Jie ; Shu, I-Jen ; Shen, Ji-Lin ; Yang, Min-De ; Wu, Chih-Hung ; Huang, Ying-Sheng</creatorcontrib><description>The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing voltage and illumination level. The theoretical electric fields as a function of the biasing voltage and the photocurrent are calculated on the basis of the depletion approximation in the junction theory and the photovoltaic effect, respectively.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.51.072301</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Japanese Journal of Applied Physics, 2012-07, Vol.51 (7), p.072301-072301-4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-b774fc976cba6791520dd4357383a86e34dadec5ef3f72937f28cdca7bc5950d3</citedby><cites>FETCH-LOGICAL-c367t-b774fc976cba6791520dd4357383a86e34dadec5ef3f72937f28cdca7bc5950d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Shu, Gia-Wei</creatorcontrib><creatorcontrib>Yang, Jun-Jie</creatorcontrib><creatorcontrib>Shu, I-Jen</creatorcontrib><creatorcontrib>Shen, Ji-Lin</creatorcontrib><creatorcontrib>Yang, Min-De</creatorcontrib><creatorcontrib>Wu, Chih-Hung</creatorcontrib><creatorcontrib>Huang, Ying-Sheng</creatorcontrib><title>Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells</title><title>Japanese Journal of Applied Physics</title><description>The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing voltage and illumination level. The theoretical electric fields as a function of the biasing voltage and the photocurrent are calculated on the basis of the depletion approximation in the junction theory and the photovoltaic effect, respectively.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkE1PAjEYhBujiYhePfdssms_t-wRUBBCIokf101p30JN6W7aJcZ_LwTvnmYmmZnDg9A9JSWlgj8ul-N1KWlJFOOEXqAB5UIVglTyEg0IYbQQNWPX6Cbnr2OspKADtHuCDqKFaAC3Dk-8zj5u8Wcber0FrKPFixAOex9179uI1-03JHw0_Q7w5OBDX_iInwOYPnmDZx6CPR0t4lyv8VsbdMJTCCHfoiunQ4a7Px2ij9nz-_SlWL3OF9PxqjC8Un2xUUo4U6vKbHSlaioZsVZwqfiI61EFXFhtwUhw3ClWc-XYyFij1cbIWhLLh6g8_5rU5pzANV3ye51-GkqaE6fmxKmRtDlzOg4ezgPf6e6_8i-YT2gZ</recordid><startdate>20120701</startdate><enddate>20120701</enddate><creator>Shu, Gia-Wei</creator><creator>Yang, Jun-Jie</creator><creator>Shu, I-Jen</creator><creator>Shen, Ji-Lin</creator><creator>Yang, Min-De</creator><creator>Wu, Chih-Hung</creator><creator>Huang, Ying-Sheng</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120701</creationdate><title>Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells</title><author>Shu, Gia-Wei ; Yang, Jun-Jie ; Shu, I-Jen ; Shen, Ji-Lin ; Yang, Min-De ; Wu, Chih-Hung ; Huang, Ying-Sheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-b774fc976cba6791520dd4357383a86e34dadec5ef3f72937f28cdca7bc5950d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shu, Gia-Wei</creatorcontrib><creatorcontrib>Yang, Jun-Jie</creatorcontrib><creatorcontrib>Shu, I-Jen</creatorcontrib><creatorcontrib>Shen, Ji-Lin</creatorcontrib><creatorcontrib>Yang, Min-De</creatorcontrib><creatorcontrib>Wu, Chih-Hung</creatorcontrib><creatorcontrib>Huang, Ying-Sheng</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shu, Gia-Wei</au><au>Yang, Jun-Jie</au><au>Shu, I-Jen</au><au>Shen, Ji-Lin</au><au>Yang, Min-De</au><au>Wu, Chih-Hung</au><au>Huang, Ying-Sheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2012-07-01</date><risdate>2012</risdate><volume>51</volume><issue>7</issue><spage>072301</spage><epage>072301-4</epage><pages>072301-072301-4</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The electroreflectance spectra of InGaP solar cells at various biasing voltages and illumination levels were studied. The Franz--Keldysh oscillations were observed and the electric field at the junction of solar cells can be extracted. The measured electric field decreases with increasing biasing voltage and illumination level. The theoretical electric fields as a function of the biasing voltage and the photocurrent are calculated on the basis of the depletion approximation in the junction theory and the photovoltaic effect, respectively.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/JJAP.51.072301</doi></addata></record>
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title Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T19%3A17%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ipap_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dependence%20of%20Biasing%20Voltage%20and%20Illumination%20Power%20on%20the%20Built-in%20Electric%20Field%20of%20InGaP%20Solar%20Cells&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Shu,%20Gia-Wei&rft.date=2012-07-01&rft.volume=51&rft.issue=7&rft.spage=072301&rft.epage=072301-4&rft.pages=072301-072301-4&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.51.072301&rft_dat=%3Cipap_cross%3E10_1143_JJAP_51_072301%3C/ipap_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true