Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing

Si thin film coated on a flexible polyimide (PI) substrate was successfully crystallized by blue multi-laser diode annealing (BLDA) in the CW mode. The precursor Si film of 50 nm thickness was stably deposited at room temperature using a radio-frequency (RF) sputtering machine. Subsequently, a blue...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2012-03, Vol.51 (3), p.03CA02-03CA02-3
Hauptverfasser:	Okada, Tatsuya, Mugiraneza, Jean de Dieu, Shirai, Katsuya, Suzuki, Toshiharu, Noguchi, Takashi, Matsushima, Hideki, Hashimoto, Takao, Ogino, Yoshiaki, Sahota, Eiji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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