Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate

Epitaxial graphene can be formed on silicon substrates by annealing a 3C-SiC film formed on a silicon substrate in ultrahigh vacuum (G/3C-SiC/Si). In this work, we explore the graphitization process on the 3C-SiC(111)/Si(111) surface by using low-energy electron diffraction and X-ray photoelectron s...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2011-07, Vol.50 (7), p.070103-070103-6
Hauptverfasser:	Takahashi, Ryota, Handa, Hiroyuki, Abe, Shunsuke, Imaizumi, Kei, Fukidome, Hirokazu, Yoshigoe, Akitaka, Teraoka, Yuden, Suemitsu, Maki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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