Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

Transparent conducting ZnO films are deposited by plasma-assisted deposition on glass and plastic substrates at temperatures as low as 50 °C. The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases w...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2011-05, Vol.50 (5), p.05FB13-05FB13-4
Hauptverfasser:	Matsumoto, Takashi, Mizuguchi, Keiichi, Horii, Takahiro, Sano, Shiho, Muranaka, Tsutomu, Nabetani, Yoichi, Hiraki, Satoshi, Furukawa, Hideaki, Fukasawa, Akihiro, Sakamoto, Shingo, Hagihara, Shigeru, Kono, Hiroshi, Kijima, Kazuhiro, Abe, Osamu, Yashiro, Kouji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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